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PIPS Detector Technologies & Electrical Features

Process on high resisitivity float zone Silicon

Design and Simulation

  • Simulation of detector operation using dedicated software packages
  • Lay-out of the design
  • Study and optimization of your specific project

Processing (single and double sided)

  • 4, 5 and 6" high resisitvity FZ wafers
  • 200 to 1000µm thickness

Technology

Implanted window:

  • Thin window: typical 50 nm, 25 nm possible (for heavy ions, low energy particles, ...)
  • Standard window: 1500 nm (for high energy physics, electrons …)
  • 125 – 150 nm aluminum layer for light thightness
  • 25-35 nm aluminum layer for Timing applications (range: psec) (total junction window: 75-100 nm)

High breakdown voltages up to 600 volts:

  • Floating guard ring structures
  • high quality oxide

Extreme low leakage currents for X-ray applications:

  • gettering techniques used
  • lifetime monitoring during process

Anti-reflective coating:

  • photodiodes for UV and visible light using scintillator read-out
 

PIPS® is a registered trademark of Canberra Industries, Inc.