Radiation Safety. Amplified.
Join us on Linkedin
Follow us on YouTube
Subscribe to our Blog

Special Applications

Electron Beam Detector Si Photodiodes CANBERRA

Electron Beam Detector Si Photodiodes CANBERRA

Electron Beam Detector Si Photodiodes CANBERRA

Applications

  • Direct detection of low energy (>1 keV) electron beams with high sensitivity
  • Backscattered electron for scanning electron microscope (SEM)
  • Photo diodes for synchrotron applications
  • Electron Micro Probe analysis for non-destructive chemical analysis

Advantages

  • Fast read-out (from ns to ps (FWHM))
  • Used in photovoltaic or biased mode

Features

  • Single or multiple junction on ceramic board
  • Thin junction entrance window: <50 nm
  • Low dark current, typically below 1 nA/cm²
  • Active area: 50 to 550 mm², different shapes or custom design request are possible
  • Diameter hole in center: standard 4 mm, sleeve: 16x3 mm
  • No optical window

Characteristics

Parameter AOPF-4CT-500 ANPD300 ANPF-16CT Unit
Incident electron energy range 1 - 250 1 - 250 1 - 450 keV
Active area 23.9 x 23.9 300 300 mm²
Opening 3 x 16 Øin: 4 Øin: 4 mm
Chip dimensions 26 x 26 24 (flat to flat) 24.4 (flat to flat) mm
Board size Ø 38 CB Ø 30 CB Ø 30 CB mm
Number of segments 4 1 4 - 16
Pad capacitance < 28 < 65 < 2 pF
Operating voltage 80 - 120 80 - 140 250 - 400 V
Operating temperature -20 /+40 -20 /+40 -20 /+40 °C
Storage temperature +100 +100 +100 °C
Resolution
(Electronic noise)
< 7 < 11 < 15 keV
Junction window thickness < 50 < 50 < 50 nm
Chip thickness 500 500 1000 um
 

Custom Detector Design Request Form

Click here to submit your Custom Detector specifications

 

PIPS® is a registered trademark of Canberra Industries, Inc.